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US 2006/0186433 A1Published application
Surface-spintronics device
AssigneeJapan Science and Technology Agency
InventorsHideaki Kasai, Hiroshi Nakanishi, Tomoya Kishi
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AssigneeJapan Science and Technology Agency
InventorsHideaki Kasai, Hiroshi Nakanishi, Tomoya Kishi
Estimating the term…
A surface-spintronic device operating on a novel principles of operations may be implemented as a spin conducting, a spin switching or a spin memory device. It includes a magnetic atom thin film (13) layered on a surface of a solid crystal (12) and a drain and a source electrodes (14) and (15) disposed at two locations on the magnetic atom thin film, respectively, whereby a spin splitting surface electronic state band formed in a system comprising said solid crystal (12) surface and said magnetic atom thin film (13) is utilized to obtain a spin polarized current flow. With electrons spin-polarized in a particular direction injected from the source electrode (15), controlling the direction of magnetization of the magnetic atom thin film (13) allows switching on and off the conduction of such injected electrons therethrough. Also, with the use of the magnetization holding function of the magnetic atom thin film (13), it is possible to realize a spin memory device that can operate to write information on controlling the direction of magnetization of the magnetic atom thin film (13) and that can operate to read information on detecting the state of conduction or nonconduction between the source and drain electrodes (15, 14).
A surface-spintronic spin conducting device, characterized in that it comprises a solid surface, a magnetic atom thin film layered on a surface of the solid crystal, and electrodes mounted at two locations on said magnetic atom thin film, whereby a spin splitting surface electronic state band formed in a system comprising said solid crystal surface and said magnetic atom thin film is utilized to cause a spin current to flow.
A surface-spintronic spin switching device, characterized in that it comprises a solid crystal surface, a magnetic atom thin film layered on a surface of the solid crystal, electrodes disposed at two locations on said magnetic atom thin film, and a control means for controlling the direction of magnetization in said magnetic atom thin film, whereby controlling, by said control means, the spin state of a spin splitting surface electronic state band formed in a system comprising said solid crystal surface and said magnetic atom thin film causes switching on and off a spin current of either a flow of electrons of up spin or a flow of electrons of down spin, of electrons supplied through one of said electrodes from an external spin conducting device.
A surface-spintronic spin memory device, characterized in that it comprises a solid surface, a magnetic atom thin film layered on a surface of the solid crystal, electrodes disposed at two locations on said magnetic atom thin film, and a control means for controlling the direction of magnetization in said magnetic atom thin film, whereby controlling, by said control means, the spin state of a spin splitting surface electronic state band formed in a system comprising said solid surface and said magnetic atom thin film causes switching on and off a spin current of either a flow of electrons of up spin or a flow of electrons of down spin, of electrons supplied through one of said electrodes from an external spin conducting device, and wherein said magnetic atom thin film has a magnetization holding property that is utilized to store information.
Dependencies are inferred from the claim text.