Polarized radiation source using spin extraction/injection

A light-emitting device comprising:

• a first semiconductor region having an n-type doping;
• a second semiconductor region formed adjacent to the first semiconductor region;
• a third semiconductor region adjacent to the second semiconductor region, the third semiconductor region having a p-type doping;
• a magnetized layer forming an interface with the first semiconductor region;
• and
• first, second, and third electrical contact structures that permit application of independent electrical signals respectively to the first semiconductor region, the magnetized layer, and the third semiconductor region.

A method for producing polarized radiation, comprising:

• maintaining a first semiconductor region of a diode at a reference voltage;
• applying a bias voltage to a second semiconductor region of the diode to drive a current through the diode and cause emission of radiation;
• and
• applying a control voltage to a magnetized region that forms an interface with one of the first and second semiconductor regions, wherein the control voltage drives a current of spin polarized electrons through the interface.