US 2006/0186422 A1 · Etching a nitride-based heterostructure

Abstract

An improved solution for producing nitride-based heterostructure(s), heterostructure device(s), integrated circuit(s) and/or Micro-Electro-Mechanical System(s) is provided. A nitride-based etch stop layer that includes Indium (In) is included in a heterostructure. An adjacent layer of the heterostructure is selectively etched to expose at least a portion of the etch stop layer. The etch stop layer also can be selectively etched. In one embodiment, the adjacent layer can be etched using reactive ion etching (RIE) and the etch stop layer is selectively etched using a wet chemical etch. In any event, the selectively etched area can be used to generate a contact or the like for a device.

Claims23

Dependent claims

A method of producing a nitride-based heterostructure, the method comprising:

obtaining a partial nitride-based heterostructure;
applying a nitride-based etch stop layer including Indium (In) above the partial nitride-based heterostructure;
applying a nitride-based cap layer above the etch stop layer;
and
selectively etching the cap layer to expose at least a portion of the etch stop layer.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/358,303Filed 21 Feb 2006

Priority

22 Feb 2005

Published

24 Aug 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

H10P 50/246
Of semiconductor materials: of Group III-V materials
B82Y 20/00
Nanooptics
H01S 5/34333
In AIIIBV compounds, e.g. AlGaAs-laser , InP-based laser: with a well layer based on GaN or GaP, e.g. blue laser
H10D 30/4755
Having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs: having wide bandgap…

Etching a nitride-based heterostructure

Life of this patent

Etching a nitride-based heterostructure

Life of this patent

Abstract

Claims23