Display device and manufacturing method of the same

A display device comprising a pixel including a thin film transistor and a light-emitting element, and a sealing material surrounding the thin film transistor and the light-emitting element over an insulating surface on a substrate,

• wherein the light-emitting element includes a first electrode, a second electrode, and a light-emitting laminated body interposed between the first electrode and the second electrode;
• wherein the first electrode is formed over an insulating film formed over the thin film transistor;
• wherein a planarizing film for the first electrode is disposed at least between the first electrode and the insulating film;
• and
• wherein the planarizing film is not formed outside the sealing material over the substrate.

A display device comprising a pixel including a thin film transistor, a light-emitting element, and a sealing material surrounding the thin film transistor and the light-emitting element over an insulating surface on a substrate,

• wherein the light-emitting element includes a first electrode, a second electrode, and a light-emitting laminated body interposed between the first electrode and the second electrode;
• wherein the first electrode is formed over an insulating film formed over the thin film transistor;
• wherein a planarizing film for the first electrode is disposed at least between the first electrode and the insulating film;
• and
• wherein the insulating film and the sealing material are overlapped with each other.

A display device comprising a pixel including a thin film transistor and a light-emitting element, and a sealing material surrounding the thin film transistor and the light-emitting element over an insulating surface on a substrate,

• wherein the light-emitting element includes a first electrode, a second electrode, and a light-emitting laminated body interposed between the first electrode and the second electrode;
• wherein the first electrode is formed over an insulating film formed over the thin film transistor;
• wherein a planarizing film for the first electrode is disposed at least between the first electrode and the insulating film;
• wherein the insulating film and the sealing material are overlapped with each other;
• and
• wherein the planarizing film is not formed outside the sealing material over the substrate.

A method for manufacturing a light-emitting device, comprising the steps of:

• forming a semiconductor film over an insulating surface;
• forming a gate insulating film over the semiconductor film;
• forming a gate electrode over the gate insulating film;
• forming an insulating film over the gate electrode;
• forming a contact hole reaching to the semiconductor film by etching the gate insulating film and the insulating film;
• forming a conductive film electrically connected to the semiconductor film through the contact hole over the insulating film;
• forming a planarizing film covering the insulating film and the conductive film;
• exposing at least part of the conductive film by etching the planarizing film;
• forming a pixel electrode electrically connected to the conductive film;
• removing a region of the planarizing film not covered with the pixel electrode with the use of the pixel electrode as a mask by etching;
• and
• forming a light-emitting element having the pixel electrode as one electrode.

A method for manufacturing a light-emitting device, comprising the steps of:

• forming a semiconductor film over an insulating surface;
• forming a gate insulating film covering the semiconductor film;
• forming a gate electrode over the gate insulating film;
• forming an insulating film covering the gate electrode;
• forming a planarizing film covering the insulating film;
• forming a pixel electrode over the planarizing film;
• removing a region of the planarizing film not covered with the pixel electrode with the use of the pixel electrode as a mask by etching;
• forming a contact hole reaching to the semiconductor film in the insulating film and the gate insulating film;
• forming a wiring electrically connected to the semiconductor film through the contact hole over the insulating film;
• and
• forming a light-emitting element in which part of the wiring is also electrically connected to the pixel electrode and having the pixel electrode as one electrode.

A method for manufacturing a light-emitting device, comprising the steps of:

• forming a semiconductor film over an insulating surface;
• forming a gate insulating film covering the semiconductor film;
• forming a gate electrode over the gate insulating film;
• forming an insulating film covering the gate electrode;
• forming a planarizing film covering the insulating film;
• forming a pixel electrode over the planarizing film;
• forming a contact hole reaching to the semiconductor film in the planarizing film, the insulating film, and the gate insulating film;
• forming a conductive film electrically connected to the semiconductor film through the contact hole over the planarizing film;
• removing a region of the planarizing film not covered with the conductive film and the pixel electrode with the use of the conductive film and the pixel electrode as masks by etching;
• and
• forming a light-emitting element in which part of the conductive film is also electrically connected to the pixel electrode and having the pixel electrode as a first electrode.

A method for manufacturing a light-emitting device, comprising the steps of:

• forming a semiconductor film over an insulating surface;
• forming a gate insulating film covering the semiconductor film;
• forming a gate electrode over the gate insulating film;
• forming an insulating film covering the gate electrode;
• forming a planarizing film covering the insulating film;
• forming a contact hole reaching to the semiconductor film in the planarizing film, the insulating film, and the gate insulating film;
• forming a conductive film electrically connected to the semiconductor film through the contact hole over the planarizing film;
• forming a pixel electrode overlapped with at least part of the conductive film over the planarizing film;
• and
• forming a light-emitting element having the pixel electrode as one electrode.

A method for manufacturing a light-emitting device, comprising the steps of:

• forming a semiconductor film over an insulating surface on a substrate;
• forming a gate insulating film over the semiconductor film;
• forming a gate electrode over the gate insulating film;
• forming a first insulating film over the gate electrode;
• forming a contact hole reaching to the semiconductor film by etching the gate insulating film and the first insulating film;
• forming a conductive film electrically connected to the semiconductor film through the contact hole over the first insulating film;
• forming a planarizing film covering the first insulating film;
• exposing at least part of the conductive film by etching the planarizing film;
• forming a second insulating film covering the planarizing film and the exposed portion of the conductive film;
• forming a contact hole reaching to the conductive film in the second insulating film by forming a mask and etching, and removing the planarizing film in an edge portion of the substrate;
• forming a pixel electrode electrically connected to the conductive film through the contact hole;
• and
• forming a light-emitting element having the pixel electrode as one electrode.

A method for manufacturing a light-emitting device, comprising the steps of:

• forming a semiconductor film over an insulating surface forming a gate insulating film over the semiconductor film;
• forming a gate electrode over the gate insulating film;
• forming a first insulating film over the gate electrode;
• forming a contact hole reaching to the semiconductor film by etching the gate insulating film and the first insulating film;
• forming a first conductive film electrically connected to the semiconductor film through the contact hole over the first insulating film;
• forming a second insulating film covering the first insulating film and the first conductive film;
• forming a contact hole reaching to the first conductive film by etching the second insulating film;
• forming a second conductive film electrically connected to the first conductive film;
• forming a planarizing film covering the second insulating film and the second conductive film;
• exposing at least part of the second conductive film by etching the planarizing film;
• forming a third conductive film over the second conductive film and the planarizing film;
• forming a mask over the third conductive film;
• etching the third conductive film with the use of the mask, and forming a pixel electrode electrically connected to the second conductive film;
• removing a region of the planarizing film not covered with the mask and the pixel electrode with the use of the mask and the pixel electrode as masks by etching;
• and
• forming a light-emitting element having the pixel electrode as one electrode.

A method for manufacturing a light-emitting device, comprising the steps of:

• forming a semiconductor film over an insulating surface forming a gate insulating film covering the semiconductor film;
• forming a gate electrode over the gate insulating film;
• forming a first insulating film covering the gate electrode;
• forming a contact hole reaching to the semiconductor film in the first insulating film and the gate insulating film;
• forming a first conductive film electrically connected to the semiconductor film through the contact hole over the first insulating film;
• forming a second insulating film covering the first insulating film and the first conductive film;
• forming a planarizing film covering the second insulating film;
• forming a second conductive film over the planarizing film;
• forming a mask over the second conductive film;
• forming a pixel electrode by etching the second conductive film with the use of the mask;
• removing a region of the planarizing film not covered with the mask and the pixel electrode with the use of the mask and the pixel electrode as masks by etching;
• forming a contact hole reaching to the first conductive film in the second insulating film;
• forming a third conductive film electrically connected to the first conductive film through the contact hole over the second insulating film, part of the third conductive film being also electrically connected to the pixel electrode;
• and
• forming a light-emitting element having the pixel electrode as a first electrode.

A method for manufacturing a light-emitting device, comprising the steps of:

• forming a semiconductor film over an insulating surface;
• forming a gate insulating film covering the semiconductor film;
• forming a gate electrode over the gate insulating film;
• forming a first insulating film covering the gate electrode;
• forming a contact hole reaching to the semiconductor film in the first insulating film and the gate insulating film;
• forming a first conductive film electrically connected to the semiconductor film through the contact hole over the first insulating film;
• forming a second insulating film covering the first insulating film and the first conductive film;
• forming a planarizing film covering the second insulating film;
• forming a second conductive film over the planarizing film;
• forming a mask over the second conductive film;
• forming a pixel electrode by etching the second conductive film with use of the mask;
• forming a contact hole reaching to the first conductive film in the planarizing film and the second insulating film;
• forming a third conductive film electrically connected to the first conductive film through the contact hole over the planarizing film;
• removing a region of the planarizing film not covered With the pixel electrode and the third conductive film with the use of the pixel electrode and the third conductive film as masks;
• and
• forming a light-emitting element having the pixel electrode as a first electrode.

A method for manufacturing a light-emitting device, comprising the steps of:

• forming a semiconductor film over an insulating surface;
• forming a gate insulating film covering the semiconductor film;
• forming a gate electrode over the gate insulating film and the semiconductor film;
• forming a first insulating film covering the gate insulating film and the gate electrode;
• forming a contact hole reaching to the semiconductor film in the first insulating film and the gate insulating film;
• forming a first conductive film electrically connected to the semiconductor film through the contact hole over the first insulating film;
• forming a second insulating film covering the first insulating film and the first conductive film;
• forming a planarizing film covering the second insulating film;
• forming a contact hole reaching to the first conductive film in the planarizing film and the second insulating film;
• forming a second conductive film electrically connected to the first conductive film through the contact hole over the planarizing film, part of the second conductive film being also electrically connected to the first electrode;
• and
• forming a light-emitting element having the first electrode as a pixel electrode.