Method and system for qualifying a semiconductor etch process
AssigneeTexas Instruments Incorporated
InventorsScott Bushman, Francis Celii
Life of this patent
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Abstract
A method of manufacturing a semiconductor device by qualifying an etch process. A semiconductor substrate is subjected to a predefined etch process to produce a partially-etched film. A scatterometry signature of the partially-etched film is produced. The scatterometry signature is used to determine if a physical property of the partially-etched film matches a target result.
Claims20
A method of manufacturing a semiconductor device by qualifying an etch process, comprising:
- subjecting a semiconductor substrate to a predefined etch process to produce a partially-etched film;
- producing a scatterometry signature of said partially-etched film;
- and
- using said scatterometry signature to determine if a physical property of said partially-etched film matches a target result.
An inspection system for qualifying an etch process in the manufacture of a semiconductor device, comprising:
- a scatterometry tool comprising a light source and detector;
- and
- a control module configured to:
- adjust an incident light applied by said light source to a partially-etched film of a semiconductor substrate and thereby produce a reflected light from said partially-etched film;
- receive said reflected light from said detector as a function of said adjusted incident light;
- produce a scatterometry signature based on said received reflected light;
- and
- determine if a physical property of said partially-etched film matches a target result based on said scatterometry signature.
A method of manufacturing an integrated circuit, comprising:
- partially etching a film on a semiconductor substrate using a predefined etch process;
- and
- inspecting said partially-etched film by:
- positioning a portion of said semiconductor substrate in a field of view of a scatterometry tool;
- producing a scatterometry signature of said partially-etched film;
- and
- using said scatterometry signature to determine if a physical property of said partially-etched film matches a target result.
Dependencies are inferred from the claim text.