SnSe-based limited reprogrammable cell

A memory device, comprising:

• a substrate;
• a conductive address line over the substrate;
• a first electrode over the conductive address line;
• a crystalline chalcogenide material layer over the first electrode;
• a tin-chalcogenide layer over the crystalline chalcogenide material layer;
• and
• a second electrode over the metal-containing layer.

A memory device, comprising:

• a substrate;
• a conductive address line over the substrate;
• a first electrode over the conductive address line;
• a germanium layer over the first electrode;
• a tin-chalcogenide layer over the germanium layer;
• and
• a second electrode over the metal-containing layer.

A processor system, comprising:

• a processor;
• and
• a memory device configured to be programmable a limited number of times, the memory device comprising:
• a first electrode;
• a second electrode;
• a material layer of a chalcogenide or semi-metal material between the first electrode and the second electrode;
• and
• a tin-chalcogenide layer between the chalcogenide material layer and the second electrode, a ratio of the thickness of the tin-chalcogenide layer to the thickness of the material layer being less than about 4:3.

A method of forming a memory device, the method comprising the acts of:

• providing a substrate;
• forming a first electrode over the substrate;
• forming a second electrode over the substrate;
• forming a material layer of a chalcogenide or semi-metal material between the first electrode and the second electrode;
• and
• forming a tin-chalcogenide layer between the chalcogenide material layer and the second electrode, the material layer and the tin-chalcogenide layer formed such that a ratio of the thickness of the tin-chalcogenide layer to the thickness of the material layer is less than about 4:3.

A method of forming a memory element, the method comprising the acts of:

• providing a substrate;
• forming a conductive layer over the substrate;
• forming a first electrode over the substrate;
• forming a first insulating layer over the conductive layer and the substrate;
• forming an opening in the first insulating layer to expose a portion of the conductive layer in the opening;
• forming a material layer in the opening and over the first electrode, the material layer being a chalcogenide material or germanium;
• forming a tin-chalcogenide layer in the opening and over the material layer, the material layer and the tin-chalcogenide layer formed such that a ratio of the thickness of the tin-chalcogenide layer to the thickness of the material layer is less than about 4:3;
• forming a second electrode layer over the tin-chalcogenide layer;
• providing a mask over the second electrode layer;
• etching the material layer, the tin-chalcogenide layer, and the second electrode to form a stack.

A method of forming a memory device, the method comprising the acts of:

• providing a substrate;
• forming a first electrode over the substrate;
• forming a second electrode over the substrate;
• forming a crystalline chalcogenide material layer between the first electrode and the second electrode;
• forming a tin-chalcogenide layer between the chalcogenide material layer and the second electrode;
• and
• forming a silver layer between the tin-chalcogenide layer and the second electrode.

A method of forming a memory device, the method comprising the acts of:

• providing a substrate;
• forming a first electrode over the substrate;
• forming a second electrode over the substrate;
• forming a germanium layer between the first electrode and the second electrode;
• forming a tin-chalcogenide layer between the chalcogenide material layer and the second electrode;
• and
• forming a silver layer between the tin-chalcogenide layer and the second electrode.