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AssigneeHitachi High-Technologies Corporation
InventorsHidetoshi Nishiyama, Muneyuki Fukuda, Noritsugu Takahashi, Mitsugu Sato, Atsuko Fukada, Naomasa Suzuki
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To establish a technique that enables sorting of the elevation and azimuth angle in the direction of emitting secondary electrons and obtaining images with emphasized contrast, in order to perform the review and analysis of shallow asperities and microscopic foreign particles in a wafer inspection during the manufacture of semiconductor devices, an electromagnetic overlapping objective lens is used to achieve high resolution, an electron beam is narrowly focused using the objective lens, an electric field for accelerating secondary electrons in the vicinity of a wafer in order to suppress the dependence on secondary electron energy of the rotation of secondary electrons generated by irradiation of the electron beam, a ring-shaped detector plate is disposed between an electron source and the objective lens, and the low angle components of the elevation angle of the secondary electrons, as viewed from the place of generation, and the high angle components are separated and also the azimuth components are separated and detected.
An inspection method using charged particle beam, comprising the steps of:
An inspection apparatus using a charged particle beam, comprising:
An inspection apparatus using a charged particle beam according to claim 16, further comprising a computer that forms images based on signals from said detection means and classifies the images according to defect types.
An inspection apparatus using a charged particle beam, comprising:
Dependencies are inferred from the claim text.