Etching and cleaning BPSG material using supercritical processing
OwnerGunilla Jacobson, Robert Kevwitch +1inventors
InventorsGunilla Jacobson, Robert Kevwitch, Marie Lowe
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Abstract
A method for etching and removing post-etch residue from a BPSG material is disclosed. In accordance with the method of the present invention, the BPSG material is etched and the residue is removed from the substrate structure using supercritical solutions.
Claims38
A method of processing a substrate having a patterned doped layer thereon, the method comprising the steps of:
- positioning the substrate on a substrate holder in a processing chamber;
- selectively etching the patterned doped layer using a first supercritical fluid comprising supercritical CO2 and a cleaning/etching chemistry;
- and
- performing a rinsing process using a second supercritical fluid comprising supercritical CO2 and a rinsing chemistry.
A computer readable medium containing program instructions for execution on a controller coupled to a high-pressure processing system, which when executed by the controller, cause the high-pressure processing system to perform the steps of:
- positioning a substrate on a substrate holder in a processing chamber;
- selectively etching a patterned doped layer using a first supercritical fluid comprising supercritical CO2 and a cleaning/etching chemistry;
- and
- performing a rinsing process using a second supercritical fluid comprising supercritical CO2 and a rinsing chemistry.
A method of operating a controller in a high-pressure processing system configured to process a substrate having a patterned doped layer thereon, the method comprising the steps of:
- instructing the high-pressure processing system to position the substrate on a substrate holder in a processing chamber;
- instructing the high-pressure processing system to selectively etch the patterned doped layer using a first supercritical fluid comprising supercritical CO2 and a cleaning/etching chemistry;
- and
- instructing the high-pressure processing system to perform a rinsing process using a second supercritical fluid comprising supercritical CO2 and a rinsing chemistry.
Computer-executable instructions for operating a high-pressure processing system configured to process a substrate having a patterned doped layer thereon, the instruction including:
- computer-executable instructions for instructing the high-pressure processing system to position the substrate on a substrate holder in a processing chamber;
- computer-executable instructions for instructing the high-pressure processing system to selectively etch the patterned doped layer using a first supercritical fluid comprising supercritical CO2 and a cleaning/etching chemistry;
- and
- computer-executable instructions for instructing the high-pressure processing system to perform a rinsing process using a second supercritical fluid comprising supercritical CO2 and a rinsing chemistry.
Dependencies are inferred from the claim text.