Silane composition, silicon film forming method and solar cell production method
AssigneeJsr Corporation
InventorsHiroshi Shiho, Hitoshi Kato
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Abstract
A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.
Claims27
A method of forming a silicon film on a substrate, comprising forming a coating film of a silane composition on the substrate and treating it with heat and/or light in a non-oxidizing atmosphere, wherein the silane composition comprises:
- (A) a polysilane compound represented by the formula SinRm, wherein n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more;
- and
- (B) at least one silane compound selected from the group consisting of cyclopentasilane, cyclohexasilane and silylcyclopentasilane.
A method of forming a silicon oxide film on a substrate, comprising forming a coating film of a silane composition on the substrate and treating it with heat and/or light in an atmosphere containing oxygen and/or ozone, wherein the silane composition comprises:
- (A) a polysilane compound represented by the formula SinRm, wherein n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more;
- and
- (B) at least one silane compound selected from the group consisting of cyclopentasilane, cyclohexasilane and silylcyclopentasilane.
A method of producing a solar cell having a structure that at least two semiconductor thin films which differ in the concentration and/or type of an impurity are laminated between a pair of electrodes, wherein at least one of the semiconductor thin films is formed by a method comprising the step of applying a silane composition to the substrate to form a coating film and the step of treating the coating film with heat and/or light, wherein the silane composition comprises:
- (A) a polysilane compound represented by the formula SinRm, wherein n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more;
- and
- (B) at least one silane compound selected from the group consisting of cyclopentasilane, cyclohexasilane and silylcyclopentasilane.
A method of producing a solar cell having a structure that at least two semiconductor thin films which differ in the concentration and/or type of an impurity are laminated between a pair of electrodes, wherein at least one of the semiconductor thin films is a p type or n type silicon thin film formed by a method comprising the step of applying a silane composition to the substrate to form a coating film and the step of treating the coating film with heat and/or light, where the silane composition comprises:
- (A) a polysilane compound represented by the formula SinRm, wherein n is an integer of 3 or more, m is an integer of n to (2n+2), and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more;
- (B) at least one silane compound selected from the group consisting of cyclopentasilane, cyclohexasilane and silylcyclopentasilane;
- and
- (D) at least one compound selected from the group consisting of a boron compound, arsenic compound, phosphorus compound, antimony compound and modified silane compound represented by the formula SiaXbYc;
- wherein X is a hydrogen atom and/or halogen atom, Y is a boron atom or phosphorus atom, a is an integer of 3 or more, b is an integer of 1 or more and a or less, and c is an integer of a or more and (2a+b+2) or less.
Dependencies are inferred from the claim text.