Rinsing step in supercritical processing

An apparatus for removing a residue from a surface of a substrate located on a substrate holder within a processing chamber, comprising:

• means for pressurizing the processing chamber to a first pressure using a high-pressure fluid;
• means for introducing a rinsing chemistry into the processing chamber, the rinsing chemistry comprising a rinsing agent in the high-pressure fluid;
• means for recirculating the rinsing chemistry within the processing chamber for a first period of time to remove a first portion of residue from the substrate, wherein the rinsing agent is partially soluble in the high-pressure fluid during the first period of time;
• means for increasing the processing chamber pressure to a second pressure;
• and
• means for recirculating the rinsing chemistry within the processing chamber for a second period of time to remove a second portion of residue from the substrate, wherein the rinsing agent is substantially completely soluble in the high-pressure fluid during the second period of time.

A computer-readable medium comprising computer-executable instructions for:

• pressurizing a processing chamber to a first pressure using a high-pressure fluid;
• introducing a rinsing chemistry into the processing chamber, the rinsing chemistry comprising a rinsing agent in the high-pressure fluid;
• recirculating the rinsing chemistry within the processing chamber for a first period of time to remove a first portion of residue from the substrate, wherein the rinsing agent is partially soluble in the high-pressure fluid during the first period of time;
• increasing the processing chamber pressure to a second pressure;
• and
• recirculating the rinsing chemistry within the processing chamber for a second period of time to remove a second portion of residue from the substrate, wherein the rinsing agent is substantially completely soluble in the high-pressure fluid during the second period of time.

A method of operating a controller in a processing system configured to process a substrate, the method comprising the steps of:

• instructing a high-pressure fluid supply system to pressurize the processing chamber to a first pressure using a high-pressure fluid;
• instructing a process chemistry supply system to introduce a rinsing chemistry into the processing chamber, the rinsing chemistry comprising a rinsing agent in the high-pressure fluid;
• instructing a recirculation system to recirculate the rinsing chemistry within the processing chamber for a first period of time to remove a first portion of residue from the substrate, wherein the rinsing agent is partially soluble in the high-pressure fluid during the first period of time;
• instructing the high-pressure fluid supply system to increase the processing chamber pressure to a second pressure;
• and
• instructing the recirculation system to recirculate the rinsing chemistry within the processing chamber for a second period of time to remove a second portion of residue from the substrate, wherein the rinsing agent is substantially completely soluble in the high-pressure fluid during the second period of time.

Computer-executable instructions for operating a controller in a processing system configured to process a substrate, the method comprising the steps of:

• computer-executable instructions for instructing a high-pressure fluid supply system to pressurize the processing chamber to a first pressure using a high-pressure fluid;
• computer-executable instructions for instructing a process chemistry supply system to introduce a rinsing chemistry into the processing chamber, the rinsing chemistry comprising a rinsing agent in the high-pressure fluid;
• computer-executable instructions for instructing a recirculation system to recirculate the rinsing chemistry within the processing chamber for a first period of time to remove a first portion of residue from the substrate, wherein the rinsing agent is partially soluble in the high-pressure fluid during the first period of time;
• computer-executable instructions for instructing the high-pressure fluid supply system to increase the processing chamber pressure to a second pressure;
• and
• computer-executable instructions for instructing the recirculation system to recirculate the rinsing chemistry within the processing chamber for a second period of time to remove a second portion of residue from the substrate, wherein the rinsing agent is substantially completely soluble in the high-pressure fluid during the second period of time.