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US 2006/0185596 A1Published application
Vapor phase growth method by controlling the heat output in the gas introduction region
AssigneeShin-Etsu Handotai Co., Ltd.
InventorHisashi Kashino
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Abstract
A vapor phase growth method for growing a semiconductor single crystal thin film on a front surface of a semiconductor single crystal substrate (1) while introducing gas into a reaction chamber (11), has a step of performing heating output power control in a gas introduction region (R1) according to a temperature detected in a region other than the gas introduction region (R1) in the reaction chamber (11).
Claims4
A vapor phase growth apparatus, comprising:
- a reaction chamber configured to be able to introduce gas for growing a semiconductor single crystal thin film by a vapor phase growth method on a front surface of a semiconductor single crystal substrate arranged therein;
- a heating apparatus for heating an inside of the reaction chamber;
- a detector for detecting a temperature of a region other than a gas introduction region in the reaction chamber;
- and
- a heating output power control apparatus for controlling the heating apparatus according to the temperature detected by the detector to perform heating output power control of the gas introduction region.
2 more elements
A vapor phase growth apparatus, comprising:
- a reaction chamber configured to be able to introduce gas for growing a semiconductor single crystal thin film by a vapor phase growth method on a front surface of a semiconductor single crystal substrate arranged therein;
- a heating apparatus for heating an inside of the reaction chamber;
- a first detector for detecting a temperature of a gas exhaust region in the reaction chamber;
- a second detector for detecting a temperature of a position corresponding to a center of the semiconductor single crystal substrate in the reaction chamber;
- and
- a heating output power control apparatus for controlling the heating apparatus according to the temperatures detected by the first and second detectors to perform heating output power control in the reaction chamber.
3 more elements
Dependencies are inferred from the claim text.