Apparatus and process for carbon nanotube growth
OwnerBernard Coll, Scott Johnsoninventors
Life of this patent
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Abstract
An apparatus is provided for growing high aspect ratio emitters (26) on a substrate (13). The apparatus comprises a housing (10) defining a chamber and includes a substrate holder (12) attached to the housing and positioned within the chamber for holding a substrate having a surface for growing the high aspect ratio emitters (26) thereon. A heating element (17) is positioned near the substrate and being at least one material selected from the group consisting of carbon, conductive cermets, and conductive ceramics. The housing defines an opening (15) into the chamber for receiving a gas into the chamber for forming the high aspect ratio emitters (26).
Claims49
An apparatus for growing high aspect ratio emitters on a substrate, comprising:
- a housing defining a chamber;
- a substrate holder attached to the housing and positioned within the chamber for holding a substrate having a surface for growing the high aspect ratio emitters thereon;
- a heating element positioned within the chamber and near the substrate and being at least one material selected from the group consisting of carbon, conductive cermets, and conductive ceramics;
- and
- wherein the housing defines an opening into the chamber for receiving a gas into the chamber for forming the high aspect ratio emitters.
An apparatus for growing high aspect ratio emitters on a substrate, comprising:
- a housing defining a chamber having an opening for receiving a gas;
- a substrate holder attached to the housing and positioned within the chamber for holding a substrate having a surface for growing the high aspect ratio emitters thereon;
- and
- a heating element positioned within the chamber and near the substrate for providing radiant heating to the substrate and biased for providing a controlled electro-thermal dissociation of the gas.
A method comprising:
- providing a substrate having a surface;
- providing radiant heat onto the surface from a heating element being at least one material selected from the group consisting of carbon, conductive cermets, and conductive ceramics;
- and
- growing high aspect ratio emitters on the surface.
A method comprising:
- providing a substrate having a surface;
- providing radiant heat onto the surface from a heating element;
- biasing the heating element for providing a controlled electro-thermal dissociation of the gas;
- and
- growing high aspect ratio emitters on the surface.
An apparatus for growing high aspect ratio emitters on a substrate, comprising:
- a housing defining a chamber;
- a substrate holder attached to the housing and positioned within the chamber for holding a substrate having a surface for growing the high aspect ratio emitters thereon;
- a heating element positioned within the chamber and near the substrate and comprising a material having properties that do not vary due to temperatures below 4000° C.;
- and
- wherein the housing defines an opening into the chamber for receiving a gas into the chamber for forming the high aspect ratio emitters.
A method comprising:
- providing a substrate having a surface;
- biasing the substrate positive with respect to a heating element;
- providing radiant heat onto the surface from the heating element;
- and
- growing high aspect ratio emitters on the surface.
Dependencies are inferred from the claim text.