Vertical batch processing apparatus

A semiconductor processing system comprising:

• a casing configured to form a handling area in an airtight state;
• a transfer port unit disposed on the casing to place thereon a transfer container for storing a plurality of target objects, the transfer port unit being configured to allow the transfer container to be opened to the handling area while maintaining an airtight state of the handling area;
• a vertical batch main-processing apparatus connected to the casing to perform a semiconductor process on the target objects;
• a vertical batch pre-processing apparatus connected to the casing to perform a pre-process on the target objects, the vertical batch pre-processing apparatus being configured to transform a semiconductor oxide film on the target objects into an intermediate film, which is decomposed or sublimated more easily than the semiconductor oxide film, so as to remove the semiconductor oxide film;
• and
• a transfer mechanism disposed inside the handling area to directly or indirectly transfer the target objects between the transfer container, the vertical batch main-processing apparatus, and the vertical batch pre-processing apparatus,
• wherein the vertical batch pre-processing apparatus comprises
• a process container configured to form an airtight process field for accommodating the target objects,
• a holder configured to support the target objects at intervals in a vertical direction within the process field,
• a first process gas supply circuit comprising a first supply port disposed outside the process field, and configured to supply a first process gas to the process field through the first supply port,
• a second process gas supply circuit comprising a second supply port disposed between the first supply port and the process field, and configured to supply a second process gas to the process field through the second supply port,
• a plasma generation field disposed between the first supply port and the second supply port, and configured to activate the first process gas to produce first active species, wherein the first active species react with the second process gas and thereby produce a reactant to react with the semiconductor oxide film to form the intermediate film, and
• an exhaust system comprising an exhaust port disposed opposite the second supply port with the process field interposed therebetween, and configured to vacuum-exhaust gas from the process field through the exhaust port.