US 2006/0185591 A1 · High temperature chemical vapor deposition apparatus

Abstract

Embodiments for an apparatus and method for depositing one or more layers onto a substrate or a freestanding shape inside a reaction chamber operating at a temperature of at least 700° C. and 100 torr are provided. The apparatus is provided with a feeding system having injection means for differential pre-reactions and/or pre-treating of a plurality of gases or gas mixtures, tailoring the distribution of a plurality of gas-phase species, yielding a deposit that is substantially uniform in thickness and chemical composition along the substrate surface. In one embodiment, the apparatus further comprises a sacrificial substrate that further helps achieving thickness and chemical uniformity on the substrate, by imitating a continuous surface to deposit on and thus preventing any disturbances in the flow pattern especially towards the edge of the substrate.

Claims38

Dependent claims

A chemical vapor deposition (CVD) system comprising:

a reaction chamber maintained at a pressure of less than 100 torr, in which at least a substrate to be coated is disposed within;
heating means for maintaining the substrate at a temperature of at least 700° C.;
at least one exhaust outlet in fluid communication with the reaction chamber;
a feed system comprising a plurality of injector systems for supplying a plurality of reactant gases or gas mixtures to the reaction chamber;
wherein the plurality of injector systems are spatially spaced sufficiently far apart for differential pre-reaction of the plurality of reactant gases or gas mixtures, forming a coating deposit that is substantially uniform in thickness and chemical composition on the substrate.

2 more elements

Dependencies are inferred from the claim text.

High temperature chemical vapor deposition apparatus

Life of this patent

High temperature chemical vapor deposition apparatus

Life of this patent

Abstract

Claims38