Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit
AssigneeNational Institute for Materials Science
InventorsKenji Watanabe, Takashi Taniguchi, Satoshi Koizumi, Hisao Kanda, Masayuki Katagiri, Takatoshi Yamada, Nesladek Milos
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