Loading patent…
AssigneeFujikura Ltd.
InventorsMasakazu Sato, Tatsuya Ito, Hideto Noguchi
Estimating the term…
This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.
A semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a first space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure, wherein
A semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a first space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the first space with reference to a pressure applied to the front surface of the diaphragm as a standard pressure, wherein
A manufacturing method for a semiconductor pressure sensor wherein, by forming a resin layer to cover pressure-sensitive gauge electrodes and piezoresistive pressure-sensitive gauge electrodes disposed on a pressure-sensitive chip and forming opening portions which show letter C forms in a plan view by partially removing parts of the resin layer positioned on the pressure-sensitive gauge electrodes, resinous projections in shapes protruding on the pressure-sensitive gauge electrodes and an insulating resin layer to cover the pressure-sensitive chip around these opening portions are formed, and then a conductive layer to cover the resinous projections is formed so as to connect to make electric conduction possible with the pressure-sensitive gauge electrodes, and after forming bumps so as to cover this conductive layer, the insulating resin layer on the piezoresistive pressure-sensitive gauge is partially removed.
Dependencies are inferred from the claim text.