Methods of operating integrated circuit memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorSung-Hun Ma
Life of this patent
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Abstract
Methods of operating an integrated circuit memory device include providing a first address and a first command to the memory device and executing the first command within the memory device. This step of executing the first command is performed concurrently with providing at least one of a second address and a second command to the memory device prior to terminating execution of the first command. This providing of at least one of the second address and the second command prior to termination execution of the first command improves timing efficiency by reducing delay associated with execution of each new command.
Claims7
A method of operating an integrated circuit memory device, comprising the steps of:
- providing a first address and a first command to the memory device;
- and
- executing the first command within the memory device concurrently with providing at least one of a second address and a second command to the memory device prior to terminating execution of the first command.
A method of operating a flash memory device, comprising the steps of:
- providing a first address and a first read, write or erase command to the flash memory device;
- executing the first read, write or erase command within the flash memory device concurrently with providing at least one of a second address and a second read, write or erase command to the flash memory device prior to terminating execution of the first read, write or erase command;
- and
- executing the second read, write or erase command within the flash memory device concurrently with providing at least one of a third address and a third read, write or erase command to the flash memory device prior to terminating execution of the second read, write or erase command.
Dependencies are inferred from the claim text.