Aqueous cleaner with low metal etch rate
AssigneeAdvanced Technology Materials, Inc.
InventorsDarryl Peters, Ewa Oldak, Elizabeth Walker, Jeffrey Barnes, Shahriar Naghshineh
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Abstract
A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post etch, post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of cleaning solution is greater than 10.
Claims8
A cleaning solution for cleaning microelectronic substrates, comprising:
- 1.0 to 1.5 wt % of a concentrate consisting essentially of tetramethyl ammonium hydroxide in an amount in the range of about 8.0 wt % to about 12.4 wt %, monoethanolamine in an amount in the range from about 14.4 wt % to about 27.8 wt %, gallic acid in an amount in the range from about 5.6 wt % to about 10.9 wt %, balance deionized water;
- and 98.5 to 99 wt % deionized water.
A post-CMP cleaning solution for cleaning microelectronic substrates comprising:
- 0.033 to 0.140 wt % tetramethylammonium hydroxide;
- 0.06 to 0.30 wt % monoethanolamine;
- 0.013 to 0.09 wt % gallic acid;
- balance deionized water.
A post-CMP cleaning solution for cleaning microelectronics substrates comprising:
- 0.122 to 1.55 wt % tetramethylammonium hydroxide;
- 0.220 to 3.48 wt % monoethanolamine;
- 0.084 to 1.36 wt % gallic acid;
- balance deionized water.
A cleaning solution for cleaning microelectronic substrates comprising:
- 1 part a concentrate consisting essentially of tetramethyl ammonium hydroxide in an amount in the range from about 1.75 wt % to 8.0 wt %, monoethanolamine in an amount in the range of from about 2.75 wt % to about 14.4 wt %, gallic acid in an amount in the range from about 1.0 wt % to about 5.6 wt %, balance deionized water;
- and 100 parts deionized water.
A cleaning solution for cleaning microelectronic substrates, comprising:
- one part of a concentrate consisting essentially of tetramethyl ammonium hydroxide in an amount in the range of about 8.0 wt % to about 12.4 wt %, monoethanolamine in an amount in the range from about 14.4 wt % to about 27.8 wt %, gallic acid in an amount in the range from about 5.6 wt % to about 10.9 wt %, balance deionized water;
- and 50 to 200 parts deionized water.
Dependencies are inferred from the claim text.