Radio frequency circuit with integrated on-chip radio frequency signal coupler
AssigneeFreescale Semiconductor, Inc.
InventorsLianjun Liu, Jonathan Abrokwah, Marcus Ray
Life of this patent
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Abstract
A radio frequency (“RF”) circuit configured in accordance with an embodiment of the invention is fabricated on a substrate using integrated passive device (“IPD”) process technology. The RF circuit (which may be, for example, a harmonic filter) includes at least one RF signal line section and an integrated RF coupler located proximate to the RF signal line section. The integrated RF coupler, its output and grounding contact pads, and its matching network are fabricated on the same substrate using the same IPD process technology. The integrated RF coupler provides efficient and reproducible RF coupling without increasing the die footprint of the RF circuit.
Claims20
An electronic device comprising:
- a semiconductor substrate;
- a radio frequency (“RF”) circuit formed on said semiconductor substrate, said RF circuit comprising an RF signal line section;
- and
- an RF coupler formed on said semiconductor substrate, said RF coupler comprising a coupling section located proximate to said RF signal line section.
An electronic device comprising:
- a semiconductor substrate;
- a radio frequency (“RF”) circuit formed on said semiconductor substrate, said RF circuit comprising an RF signal line section having a first side and a second side opposing said first side;
- and
- an RF coupler formed on said semiconductor substrate, said RF coupler comprising a first coupling section located proximate to said first side of said RF signal line section, and a second coupling section located proximate to said second side of said RF signal line section.
An electronic device fabrication method comprising:
- forming a radio frequency (“RF”) coupler on a substrate using a semiconductor process technology, said RF coupler comprising a coupling section;
- forming an RF signal line section on said substrate using said semiconductor process technology, said RF signal line section being located proximate to said coupling section;
- and
- forming at least one integrated passive device on said substrate using said semiconductor process technology, said at least one integrated passive device being connected to said RF signal line section.
Dependencies are inferred from the claim text.