Back to results
US 2006/0141909 A1Published application
Chemical mechanical polishing apparatus
AssigneeDongbuAnam Semiconductor Inc.
InventorJae-Won Han
Life of this patent
Estimating the term…
Abstract
A “black belt” phenomenon that may be caused by an eddy of a slurry may be prevented when a wafer is polished by a chemical mechanical polishing (CMP) apparatus that includes a polishing pad to be supplied with the slurry, a polishing head including a top ring adapted to hold a wafer, and a buffer ring forming a buffer space between an edge region of the wafer and an eddy region of the slurry that may be formed in front of the polishing head.
Claims19
An apparatus for chemical mechanical polishing, comprising:
- a polishing pad to be supplied with a slurry;
- a polishing head including a top ring adapted to hold a wafer;
- and
- a buffer ring including a buffer space between an edge region of the wafer and an eddy region of the slurry formed in front of the polishing head.
1 more element
An chemical mechanical polishing apparatus, comprising:
- a polishing pad;
- a polishing head including a top ring adapted to hold a wafer;
- and
- a buffer ring around the polishing head.
1 more element
A method of chemical mechanical polishing, comprising:
- polishing a wafer by pressing the wafer against a polishing pad using a polishing head including a top ring adapted to hold the wafer;
- and
- reducing or preventing damage to an edge region of the wafer from an eddy of the slurry, using a buffer ring around the polishing head.
Dependencies are inferred from the claim text.