Method for monitoring a CMP polishing method and arrangement for a CMP polishing method

An arrangement for carrying out a CMP polishing method, comprising:

• a substrate mount for holding a substrate;
• a polishing pad mount for holding a polishing pad;
• a drive, by means of which the substrate mount and the polishing pad mount can be moved relative to one another, the substrate mount and the polishing pad mount being formed that the polishing pad can be operatively connected to a surface of the substrate;
• a measuring device, which can be operatively connected to the polishing pad, the measuring device having a sensor, by means of which the surface constitution of the polishing pad can be detected, the measuring device configured to generate a measurement signal dependent on the surface constitution of the polishing pad;
• and
• an evaluation unit is provided, which is connected to the sensor, wherein the evaluation unit is connected to a data memory, reference values for the measurement signal of the sensor, which are assigned to a surface constitution of the substrate, are stored in the data memory,
• the measurement signal can be fed to the evaluation unit, and the evaluation unit is designed to identify a surface constitution and/or a surface change of the substrate by way of a comparison between the measurement signal and a reference value.

A method for monitoring a CMP polishing method, comprising:

• fixing a substrate in a mount;
• fixing a polishing pad on a plate;
• operatively connecting a surfaced of the polishing pad to a surface of the substrate, the polishing pad and the substrate being moved relative to one another, so that material is removed from the surface of the substrate;
• providing a measuring device, which is operatively connected to the surface of the polishing pad, the measuring device generating a measurement signal dependent on the surface constitution of the polishing pad, the measurement signal being used for identifying a change in the material of the surface of the substrate during the CMP polishing method, wherein the measuring device detects a force effect or a friction effect between the polishing pad and the measuring device.

An arrangement for carrying out a CMP polishing method, comprising:

• a substrate mount for holding a substrate;
• a polishing pad mount for holding a polishing pad;
• a drive, by means of which the substrate mounts and the polishing pad mount can be moved relative to one another, the substrate mount and the polishing pad mount being formed that the polishing pad can be operatively connected to a surface of the substrate;
• a measuring device, which can be operatively connected to the polishing pad, the measuring device having a sensor, by means of which the surface constitution of the polishing pad can be detected, the measuring device configured to generate a measurement signal dependent on the surface constitution of the polishing pad;
• an evaluation unit, which is connected to the sensor, wherein the evaluation unit is connected to a data memory,
• reference values for the measurement signal of the sensor, which are assigned to a surface constitution of the substrate, are stored in the data memory, the measurement signal can be fed to the evaluation unit, and
• the evaluation unit is designed to identify a surface constitution and/or a surface change of the substrate by way of a comparison between the measurement signal and a reference value,
• the sensor detects, as measurement signal, a friction value between the polishing pad and the measuring device, and
• the evaluation unit identifies a surface constitution and/or a surface change of the substrate from the friction value and the corresponding reference value stored in the data memory.