Method for fabrication semiconductor device

A method of fabricating a semiconductor device comprising:

• (1) a step of forming an insulating film on the semiconductor substrate and a mask on the insulating film, the mask having a hole portion formed with a plurality of hole patterns and a flat portion not formed with a hole pattern;
• (2) a step of forming a plurality of holes in the insulating film by dry etching based on the mask;
• (3) a step of irradiating light having a continuous spectrum on a flat portion and a hole portion of the film, measuring a change in the wavelength axis direction shift amount between the reflectivity of detection light in the flat portion and the reflectivity of detection light in the hole portion and calculating the depth of the hole portion based on the measurement result thereby to control the operation to form a plurality of holes through the insulating film during the step of (2);
• and
• (4) a step of burying a metal in the plurality of the holes of the hole portion.

A method for fabricating a semiconductor device by preparing a plasma etching system including a vacuum chamber, a susceptor arranged in the vacuum chamber for installing a semiconductor wafer, a gas introducing means for introducing the material gas to the vacuum chamber and a high-frequency power introducing means, the method comprising the step of converting to a plasma gas introduced into the vacuum chamber by the gas introducing means and forming a plurality of holes selectively on a main surface of the semiconductor wafer in a plasma atmosphere,

• the plasma etching system including a light source for radiating detection light, a detection system having a beam splitter arranged in a light path, a lens, a spectrometer and a diode array, an XY movable table movable in horizontal direction in the detection system and a computer for storing data of the detection system, and the detection light from the light source being radiated on the main surface of the semiconductor wafer through a quartz window formed in a ceiling portion of the vacuum chamber;
• and
• the method further comprising
• a step of radiating the detection light from the light source in a flat portion and a hole portion of the main surface of the semiconductor wafer, and measuring the change in reflectivity in the flat portion and the hole portion, during or after the step of forming the holes.

A method of fabricating a semiconductor device by preparing a plasma etching system including a vacuum chamber, a gas introducing means for introducing the material gas to the vacuum chamber and a high-frequency power introducing means, the method comprising the step of converting, by the high-frequency power, to a plasma the gas introduced into the vacuum chamber by the gas introducing means and forming a plurality of holes selectively on a main surface of a semiconductor wafer in a plasma atmosphere, wherein:

• the plasma etching system includes an etching depth inspection unit having a first electrode arranged in contact with the semiconductor wafer and movable in horizontal direction, a second electrode arranged in opposed relation to first electrode and movable in vertical direction, an impedance meter electrically connected to first and second electrodes, and a computer electrically connected to the impedance meter through an A/D converter;
• the method comprising a step of measuring an electrostatic capacitance of a flat portion and a hole portion of the wafer on the main surface of the semiconductor wafer by the etching depth inspection unit after forming the holes, and a step of comparing the electrostatic capacitance acquired from the flat portion and the hole portion with each other and determining the difference between a measurement value of the electrostatic capacitance of the flat portion and a measurement value of the electrostatic capacitance of the hole portion.