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US 2006/0141793 A1Published application
Forming of trenches or wells having different destinations in a semiconductor substrate
AssigneeSTMicroelectronics S.r.l.
InventorChristine Anceau
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Abstract
A method for forming, in a semiconductor substrate, wells and/or trenches having different destinations, including the steps of at least partly simultaneously etching cavities according to the pattern of the trenches and/or wells; closing the openings of the cavities with at least one first non-conformal thick layer, and selectively opening the first thick layer according to the subsequent processings.
Claims8
A method for forming, in a semiconductor substrate, wells and/or trenches having different destinations, comprising at least the steps of:
- simultaneously etching the trenches and/or wells;
- closing the openings of the cavities with at least one first non-conformally deposited thick layer;
- and
- selectively opening the first thick layer according to the subsequent processings.
1 more element
Dependencies are inferred from the claim text.