Sputtering apparatus and method for forming metal silicide layer using the same
AssigneeDongbuAnam Semiconductor Inc.
InventorJae Han
Life of this patent
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Abstract
A sputtering apparatus for forming a low-resistance uniform metal silicide layer without additional heat treatment and a metal silicide layer forming method using the same are provided. The sputtering apparatus includes a sputtering chamber; a gas introduction port formed at an upper location of a lateral wall of the sputtering chamber; a gas exhaust port formed at a bottom wall of the sputtering chamber; a target located in an upper region of the sputtering chamber; a power source to supply the target with high-frequency electric power; a stage located in a bottom region of the sputtering chamber to heat the semiconductor substrate; and a sieve provided between the target and the semiconductor substrate to improve straightness of charged metal particles.
Claims15
A sputtering apparatus for forming a layer on a semiconductor device, comprising:
- a sputtering chamber with upper, bottom, and lateral walls;
- a gas introduction port formed at an upper portion of one of the lateral walls of the sputtering chamber;
- a gas exhaust port formed at the bottom wall of the sputtering chamber;
- a target of material that forms the layer to be deposited, said target located in an upper region of the sputtering chamber;
- a power source to supply the target with high-frequency electric power;
- a stage located in a bottom region of the sputtering chamber that supports and heats a semiconductor substrate;
- a sieve provided between the target and the semiconductor substrate to straighten charged metal particles from the target;
- and
- a supporting member arranged on an inner wall surface of the sputtering chamber to support the sieve.
A method for forming a metal silicide layer, comprising:
- forming a transistor, which includes a gate electrode and a source/drain region, on a semiconductor substrate;
- loading the semiconductor substrate formed with the transistor into a sputtering apparatus having a sieve with a plurality of holes between a target and a stage;
- dispersing charged metal particles by striking the target of the sputtering apparatus;
- and
- depositing a metal layer on the semiconductor substrate after heating the semiconductor substrate, and reacting the charged metal particles with the semiconductor substrate to form the metal silicide layer.
Dependencies are inferred from the claim text.