Method of manufacturing a semiconductor device
AssigneeDongbuAnam Semiconductor Inc.
InventorBo-Yeoun Jo
Life of this patent
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Abstract
Electrical characteristics of a semiconductor device may be enhanced by completely removing a residue such as a polymer formed in a trench when the semiconductor device is manufactured by a method including: forming a via hole and a trench on a semiconductor substrate by an etching process; coating a photoresist on an entire surface of the semiconductor substrate such that the via hole and the trench may be filled thereby; removing a polymer defect in the trench while removing the coated photoresist by a plasma treatment under predetermined process conditions; and performing a wet cleaning process so as to remove a residue of the photoresist.
Claims14
A method of manufacturing a semiconductor device, comprising:
- etching a via hole and a trench in a semiconductor substrate;
- coating a photoresist on the semiconductor substrate such that the via hole and the trench may be filled;
- removing a polymer defect in the trench while removing the photoresist by a plasma treatment under predetermined process conditions;
- and
- performing a wet cleaning process so as to remove a residue of the photoresist.
Dependencies are inferred from the claim text.