Semiconductor integrated device and method for manufacturing same
OwnerNobuhiro Suzuki, Kenji Imai +2inventors
InventorsNobuhiro Suzuki, Kenji Imai, Isaya Kitamura, Keiichi Yamaguchi
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor integrated device includes steps of forming an integrated circuit element on a semiconductor substrate, forming internal wiring, forming a groove along a scribe line on a back surface of the semiconductor substrate to expose a portion of the internal wiring, forming a metal film covering at least the groove, patterning the metal film to form external wiring and removing the metal film at a bottom portion of the groove, forming a protection film covering the external wiring and the bottom portion of the groove, and separating the semiconductor substrate along the scribe line.
Claims7
A method for manufacturing a semiconductor integrated device, comprising:
- a first step of forming an integrated circuit element in each region on a semiconductor substrate partitioned by a scribe line;
- a second step of forming internal wiring extending toward a boundary of adjacent integrated circuit elements;
- a third step of forming a groove along the scribe line on a back surface of the semiconductor substrate to expose a portion of the internal wiring;
- a fourth step of forming a metal film covering the back surface of the semiconductor substrate and the groove;
- a fifth step of patterning the metal film to form external wiring and removing the metal film at a bottom portion of the groove;
- a sixth step of forming a protection film covering the external wiring and the bottom portion of the groove;
- and
- a seventh step of separating the semiconductor substrate along the scribe line.
A semiconductor integrated device comprising:
- a semiconductor chip in which an integrated circuit element is formed on a semiconductor substrate;
- internal wiring formed on the semiconductor substrate and extending to a side periphery of the semiconductor substrate;
- and
- external wiring formed detouring around a side surface of the semiconductor chip and connected to the internal wiring, wherein
- an end of the external wiring is covered by a protection film.
Dependencies are inferred from the claim text.