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AssigneeInternational Business Machines Corporation
InventorMichael Gaidis
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A method for forming an alignment mark structure for a semiconductor device includes forming an alignment recess at a selected level of the semiconductor device substrate. A first metal layer is formed over the selected substrate level and within the alignment recess, wherein the alignment recess is formed at a depth such that the first metal layer only partially fills the alignment recess. A second metal layer is formed over the first metal layer such that the alignment recess is completely filled. The second metal layer and the first metal layer are then planarized down to the selected substrate level, thereby creating a sacrificial plug of the second layer material within the alignment recess. The sacrificial plug is removed in a manner so as not to substantially roughen the planarized surface at the selected substrate level.
A method for forming an alignment mark structure (148) for a semiconductor device, the method comprising:
The method of claim 3, wherein said second metal layer (142) further has an etch selectivity with respect to a dielectric material surrounding said alignment recess (130).
Dependencies are inferred from the claim text.