Formation of junctions and silicides with reduced thermal budget

Abstract

Method of formation of a metal-silicide layer (12, 13, 14, 18, 19) an a semiconductor substrate (1), the semiconductor substrate (1) including at least a dopant region (5); the dopant region (5) including an ultra-shallow junction region; the method including as a first step at least one impurity implantation process (IB dopant) for forming the dopant region (5); the method including as a second step at least one metal implantation process (IB metal) for forming the metal-silicide layer (12, 13, 18, 19) an the dopant region (5), and the method including, as a third step carried out after the first and the second step, a low-temperature annealing process wherein simultaneously the dopant region (5) is activated and the metal-silicide layer (12, 13, 14, 18, 19) is formed.

Dependencies are inferred from the claim text.