Method of sequentially forming silicide layer and contact barrier in semiconductor integrated circuit device

Abstract

A method of sequentially forming a silicide layer and a contact barrier in a semiconductor device is provided. In the method, a pre-metal dielectric layer is deposited over an underlying structure that has a silicon substrate, a gate electrode on the substrate, and source/drain regions in the substrate. Contact holes are formed toward the gate electrode and the source/drain regions in the dielectric layer. Then, a metal layer for the silicide layer is selectively deposited on the bottom of the contact holes by using ion implantation, for example. Thereafter, the contact barrier is conformally deposited on entire exposed surface, and a heat-treatment process is performed to form the silicide layer from the metal layer.

Dependencies are inferred from the claim text.