Manufacturing method with self-aligned arrangement of solid body electrolyte memory cells of minimum structure size
AssigneeInfineon Technologies AG
InventorsThomas Happ, Ralf Symanczyk
Life of this patent
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Abstract
The object of providing a method for manufacturing solid body electrolyte memory cells or CB memory cells, respectively, which is suited for the simplified manufacturing of highly dense arrays with crosspoint architecture is solved by the present invention in that the solid body electrolyte memory cells are manufactured by self-aligned etching of the word lines that constitute simultaneously the top electrodes of the memory cells, and of the CB memory cells themselves. An advantage of the inventive method consists in that no via lithography is required, so that the manufacturing method is easier to perform, less expensive, and yields reliable results.
Claims21
A method for manufacturing or integrating, respectively, solid body electrolyte memory cells for generating at least one memory array with crosspoint architecture, said method comprising at least the following steps:
- depositing a bottom electrode material (7) on a silicon substrate (6),
- structuring the bottom electrode material for forming bottom electrode paths (7),
- generating a layer stack on the prestructured bottom electrode paths (7) by the depositing of layers
- of a solid body electrolyte material (4),
- of a reactive metal (9), and
- of a top electrode material (10),
- structuring the top electrode material (10) lithographically vertically to the bottom electrode paths (7) by self-aligned etching of the top electrode material for generating top electrode paths (10), and
- structuring the remaining layer stack lithographically vertically to the bottom electrode paths (7) by self-aligned etching of the active layers or of the solid body electrolyte material (4), respectively, and of the reactive metal (9) for generating continuous paths or trenches (13), respectively, in the layer stack.
A method for manufacturing or integrating, respectively, solid body electrolyte memory cells for generating at least one memory array with crosspoint architecture and with integrated diodes for the specific addressing of individual memory cells, wherein the method comprises at least the following steps:
- generating a bottom part of a layer stack on a silicon substrate (6) by the deposition of layers
- of a bottom electrode material (7),
- of a selection diode material (15), and
- of a solid body electrolyte material (4),
- structuring or etching, respectively, the generated bottom part of the layer stack for forming bottom electrode paths (7),
- filling the generated structures with insulating material (14), and subsequent planarizing,
- generating a top part of the layer stack by the deposition of layers
- of an ion donor material (9), and
- of a top electrode material (10),
- structuring or etching, respectively, the ion donor material (9) and the top electrode material (10) in line shape vertically to the bottom electrode paths (7).
Dependencies are inferred from the claim text.