Semiconductor memory device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorKi-Won Nam
Life of this patent
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Abstract
A semiconductor memory device and a method for fabricating a semiconductor memory device are provided. A semiconductor memory device includes a substrate, an inter-layer insulation layer including a storage node contact hole and formed on the substrate, a pair of storage node contact spacers formed on sidewalls of the storage node contact hole and having upper portions recessed to a predetermined depth, a storage node contact plug covering the upper portions of the storage node contact spacers and filling the storage node contact hole, a bottom electrode connected to the storage node contact plug and a dielectric layer and a top electrode stacked on the bottom electrode.
Claims10
A semiconductor memory device, comprising:
- a substrate;
- an inter-layer insulation layer including a storage node contact hole and formed on the substrate;
- a pair of storage node contact spacers formed on sidewalls of the storage node contact hole and having upper portions recessed to a predetermined depth;
- a storage node contact plug covering the upper portions of the storage node contact spacers and filling the storage node contact hole;
- a bottom electrode connected to the storage node contact plug;
- and
- a dielectric layer and a top electrode stacked on the bottom electrode.
A method for fabricating a semiconductor memory device, comprising:
- forming an inter-layer insulation layer including a storage node contact hole on a substrate;
- forming a pair of storage node contact spacers of which upper portions are recessed to a predetermined depth on sidewalls of the storage node contact hole;
- forming a storage node contact plug coring upper portions of the storage node contact spacers and filling the storage node contact hole;
- forming an etch stop insulation layer on the inter-layer insulation layer and the storage node contact plug;
- forming a trench opening the storage node contact plug by dry etching the etch stop insulation layer;
- forming a bottom electrode on the trench;
- and
- sequentially forming a dielectric layer and a top electrode on the bottom electrode.
Dependencies are inferred from the claim text.