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US 2006/0141706 A1Published application
Methods of forming non-volatile semiconductor memory devices using prominences and trenches, and devices so formed
AssigneeSamsung Electronics Co., Ltd.
InventorSeung-Wan Hong
Life of this patent
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Abstract
A semiconductor substrate is patterned to form a depression and prominence. A floating gate is formed so as to cover at least both sidewalls of the prominence of the depression and prominence, and is then etched to form a trench for a device isolation self-aligned with the floating gate. Related structures are also described.
Claims31
A method of forming a non-volatile semiconductor memory device, the method comprising:
- forming a semiconductor substrate having a depression and prominence structure;
- forming a floating gate insulated from the depression and prominence structure on a sidewall of the prominence of the depression and prominence structure;
- forming a trench that is self-aligned with the floating gate by etching the semiconductor substrate positioned outside the floating gate using the floating gate as an etch mask;
- forming a device isolation layer in the trench;
- and
- forming a control gate insulated from the floating gate and the depression and prominence structure and overlapping the floating gate.
3 more elements
A method of forming a non-volatile semiconductor memory device, the method comprising:
- forming a first insulating layer on a semiconductor substrate;
- forming a mask pattern on the first insulating layer;
- etching the first insulating layer and the semiconductor substrate exposed by the mask pattern to form a depression and prominence;
- forming a second insulating layer on sidewalls of the prominence of the semiconductor substrate and on a bottom of the depression of the semiconductor substrate;
- forming a conductive spacer on the sidewalls of the prominence of the semiconductor substrate and sidewalls of the mask pattern;
- forming a trench by etching the second insulating layer and the semiconductor substrate exposed outside the conductive spacer, the trench being self-aligned with the conductive spacer by using the conductive spacer as an etch mask;
- forming a device isolation layer in the trench;
- forming a conductive layer on the mask pattern, the conductive spacer and the device isolation layer;
- and
- patterning the conductive layer and the conductive spacer.
7 more elements
A method of forming a semiconductor device, the method comprising:
- patterning a semiconductor substrate to form a depression and prominence;
- forming a first insulating layer along the depression and prominence of the semiconductor substrate;
- forming a first conductive layer pattern covering an upper surface and both sidewalls of the prominence of the semiconductor substrate;
- etching the depression of the semiconductor substrate exposed by the first conductive layer pattern to a trench for a device isolation, the trench being self-aligned with the first conductive layer pattern by using the first conductive layer pattern as an etch mask;
- forming a device isolation layer in the trench;
- forming a second conductive layer on the first conductive layer pattern and the device isolation layer;
- and
- patterning the second conductive layer and the first conductive layer pattern.
5 more elements
A semiconductor device comprising:
- a second prominence that protrudes from a semiconductor substrate and a first prominence that protrudes from an upper surface of the second prominence, the first prominence having a lower width that is narrower than a width of an upper surface of the second prominence;
- a first insulating layer on the upper surface of the first prominence;
- a second insulating layer on both sidewalls of the first prominence and the upper surface of the second prominence exposed at both sides of the first prominence;
- a first conductive layer on the first and second insulating layers;
- and
- a device isolation layer covering both sidewalls of the second prominence and a part of both sidewalls of the first conductive layer.
3 more elements
A method of forming a semiconductor device comprising:
- forming a fin in a semiconductor substrate;
- forming an insulated first conductive layer on sidewalls of the fin and on a surface of the semiconductor substrate adjacent the fin to define a channel or a tunneling region in the sidewalls of the fin adjacent the insulated first conductive layer and in the surface of the semiconductor substrate adjacent the insulated first conductive layer;
- etching the semiconductor substrate outside the insulated first conductive layer using the insulated first conductive layer as a mask to form a trench;
- forming an isolation layer in the trench;
- and
- forming a second conductive layer on the insulated first conductive layer and on the isolation layer in the trench.
3 more elements
A semiconductor device comprising:
- a fin in a semiconductor substrate;
- an insulated first conductive layer on sidewalls of the fin and on a surface of the semiconductor substrate adjacent the fin that defines a channel or tunneling region in the sidewalls of the fin adjacent the insulated first conductive area and in the surface of the semiconductor substrate adjacent the insulated first conductive layer;
- a trench in the semiconductor substrate immediately outside the insulated first conductive layer;
- an isolation layer in the trench;
- and
- a second conductive layer on the insulated first conductive layer and on the isolation layer in the trench.
3 more elements
Dependencies are inferred from the claim text.