Method for depositing titanium oxide layer and method for fabricating capacitor by using the same

Abstract

Disclosed are a method for depositing a titanium oxide (TiO2) layer and a method for fabricating a capacitor by using the same. The method for forming the TiO2 layer includes the steps of: a) adsorbing titanium hydride (TiH2) on a wafer loaded into a chamber by supplying TiH2 to the chamber; b) purging out the non-adsorbed TiH2; c) forming an TiO2 layer on the wafer by inducing a reaction between the TiH2 and the oxygen source with supplying an oxygen source as a reaction gas to the chamber; and d) purging out the non-reacted oxygen source and a by-product. The method for fabricating the capacitor includes the steps of: forming a lower electrode on a wafer; depositing a titanium oxide (TiO2) layer on the lower electrode by using titanium hydride (TiH2) as a precursor; and forming an upper electrode on the TiO2 layer.

Dependencies are inferred from the claim text.