Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorsSang-Man Bae, Dong-Heok Park
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Abstract
A semiconductor device and a method for fabricating the same are provided. The method includes: forming a plurality of protruded patterns smaller than gate structures by selectively removing predetermined portions of a substrate; and forming the gate structures over the protruded patterns. The semiconductor device includes: a plurality of protruded substrate portions smaller than the gate structures; and a plurality of gate structures encompassing the protruded substrate portions, wherein channels are formed on surfaces of the protruded substrate portion.
Claims10
A method for fabricating a semiconductor device, comprising:
- forming a plurality of protruded patterns smaller than gate structures by selectively removing predetermined portions of a substrate;
- and
- forming the gate structures over the protruded patterns.
The method of 1, wherein the widths of the protruded patterns are in a range of approximately one third to approximately two third of the widths of the gate structures.
A semiconductor device, comprising:
- a plurality of protruded substrate portions smaller than the gate structures;
- and
- a plurality of gate structures encompassing the protruded substrate portions, wherein channels are formed on surfaces of the protruded substrate portion.
Dependencies are inferred from the claim text.