Method for manufacturing a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsSeung Jin, Min Lee, Kyoung Rouh
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Abstract
Provided is a method for manufacturing a semiconductor device comprising forming a device isolation layer on a semiconductor substrate; forming gate insulating layers on the upper part of the semiconductor substrate having the device isolation layers formed thereon; forming an undoped layer for a gate electrode; implanting mixed dopant ions consisting of at least two dopant ions containing 11B ions into the undoped layer, utilizing an ion-implantation mask; and heat-treating the mixed dopant ion-implanted layer.
Claims13
A method for manufacturing a semiconductor device comprising:
- forming device isolation layers on a semiconductor substrate;
- forming a gate insulating layer on the upper part of the semiconductor substrate having the device isolation layers formed thereon;
- forming an undoped layer for a gate electrode;
- implanting mixed dopant ions consisting of at least two dopant ions containing 11B ions into the undoped layer, utilizing an ion-implantation mask;
- and
- heat-treating the mixed dopant ion-implanted layer.
A method for manufacturing a semiconductor device comprising:
- forming device isolation layers on a semiconductor substrate;
- forming a gate insulating layer on the upper part of the semiconductor substrate having the device isolation layers formed thereon;
- forming an undoped layer for a gate electrode;
- implanting 30BF ions into the undoped layer, utilizing an ion-implantation mask;
- and
- subjecting the ion-implanted layer to heat-treatment.
Dependencies are inferred from the claim text.