Method for producing insulated gate thin film semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsNaoto Kusumoto, Shunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
An amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 μm or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystallize it. Then, of end portions (peripheral portions) of the island semiconductor regions, at least a portion used to form a channel of a thin film transistor (TFT), or a portion that a gate electrode crosses is etched, so that a region that the distortion is accumulated is removed. By using such semiconductor regions, a TFT is produced.
Claims18
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- irradiating the semiconductor film with a second harmonic of a pulse laser comprising Nd to crystallize the semiconductor film;
- and
- patterning the crystallized semiconductor film to form an active layer.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- irradiating the semiconductor film with a third harmonic of a pulse laser comprising Nd to crystallize the semiconductor film;
- and
- patterning the crystallized semiconductor film to form an active layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a semiconductor film over a substrate;
- patterning the semiconductor film into a first shape semiconductor island;
- irradiating the first shape semiconductor island with a second harmonic of a pulse laser comprising Nd to crystallize the first shape semiconductor island;
- and
- patterning the crystallized semiconductor island into a second shape semiconductor island.
A method of manufacturing a semiconductor device, the method comprising:
- forming a semiconductor film over a substrate;
- patterning the semiconductor film into a first shape semiconductor island;
- irradiating the first shape semiconductor island with a third harmonic of a pulse laser comprising Nd to crystallize the first shape semiconductor island;
- and
- patterning the crystallized semiconductor island into a second shape semiconductor island.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- irradiating the semiconductor film with a second harmonic of a pulse laser comprising Nd to crystallize the semiconductor film;
- and
- patterning the crystallized semiconductor film to form an active layer, forming source, drain and channel region of the thin film transistor within the active layer,
- wherein the irradiation of the semiconductor film is conducted in such a manner that the semiconductor film is scanned with the pulse laser in parallel with a carrier flow direction in the channel region.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- irradiating the semiconductor film with a third harmonic of a pulse laser comprising Nd to crystallize the semiconductor film;
- and
- patterning the crystallized semiconductor film to form an active layer, forming source, drain and channel region of the thin film transistor within the active layer,
- wherein the irradiation of the semiconductor film is conducted in such a manner that the semiconductor film is scanned with the pulse laser in parallel with a carrier flow direction in the channel region.
Dependencies are inferred from the claim text.