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US 2006/0141684 A1Published application
Polysilicon film, thin film transistor using the same, and method for forming the same
AssigneeAu Optronics Corporation
InventorsChia-Tien Peng, Chih-Hsiung Chang
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Abstract
A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process to crystallize the amorphous silicon film and transform it into a poly-Si film.
Claims19
A method for forming a poly-Si film, comprising:
- forming an activated layer on a substrate, wherein the activated layer includes carbon, hydrogen and silicon;
- forming an amorphous silicon film on the activated layer;
- and
- performing an annealing process to transform the amorphous silicon film into the poly-Si film.
1 more element
A method for manufacturing a thin film transistor, comprising:
- forming an activated layer including carbon, hydrogen and silicon on a substrate;
- forming an amorphous silicon film on the activated layer;
- performing an annealing process to transform the amorphous silicon film into the poly-Si film, wherein the poly-Si film having a channel region on the activated layer, a source region in one side of the channel region and a drain region in the other side of the channel region;
- forming an gate insulating layer on the poly-Si film;
- forming an gate electrode on the gate insulating layer;
- forming an insulating layer on the gate metal and the poly-Si film;
- forming two openings in the insulating layer corresponding to the source region and the drain region, respectively;
- and
- forming a source electrode and a drain electrode on the insulating layer, wherein the source electrode and the drain electrode correspond to the source region and the drain region, respectively, and are electrically connected to the poly-Si film through the two openings.
6 more elements
A thin film transistor comprising:
- an activated layer formed on a substrate, wherein the material of the activated layer includes carbon, hydrogen and silicon;
- a poly-Si film, formed on the activated layer, including a channel region, a source region in one side of the channel region and a drain region in the other side of the channel region;
- a gate insulating layer formed on the channel region of the poly-Si film;
- a gate electrode formed on the gate insulating layer;
- an insulating layer, formed on the gate electrode and the poly-Si film, having two openings respectively corresponding to the source region and the drain region;
- a source electrode formed on the insulating layer and corresponding to the source region and connected to the poly-Si film through one of the openings;
- and
- a drain metal formed on the insulating layer and corresponding to the drain region and connected to the poly-Si film through the other of the openings.
5 more elements
Dependencies are inferred from the claim text.