Semiconductor devices having regions of induced high and low conductivity, and methods of making the same

A method of making a semiconductor apparatus, comprising the steps of:

• forming a substrate having a substrate surface;
• forming a layer of a first material overlying a first region of said substrate surface;
• forming a layer of a second material overlying a second region of said substrate surface;
• and forming a layer of a semiconductor overlying said layer of first material and overlying said layer of second material;
• a first region of said layer of semiconductor, overlying said layer of first material and having a first conductivity;
• a second region of said layer of semiconductor, overlying said layer of second material and having a second conductivity;
• said first conductivity being substantially different from said second conductivity.

A method of making a semiconductor apparatus, comprising the steps of:

• forming a substrate having a substrate surface;
• forming a layer of a first material overlying a first region of said substrate surface;
• forming a layer of a second material overlying a second region of said substrate surface;
• and forming a layer of a semiconductor overlying said layer of first material and overlying said layer of second material;
• a first region of said layer of semiconductor overlying said layer of first material and including crystal grains having a first average crystal grain size, a second region of said layer of semiconductor overlying said layer of second material and including crystal grains having a second average crystal grain size, said first average crystal grain size being substantially different from said second average crystal grain size.

A method of making a semiconductor apparatus, comprising the steps of:

• forming a substrate having a substrate surface;
• forming a layer of a first material overlying a first region of said substrate surface;
• forming a layer of a second material overlying a second region of said substrate surface;
• and forming a layer of a semiconductor overlying said layer of first material and overlying said layer of second material;
• a first region of said layer of semiconductor overlying said layer of first material and including crystal grains having a first average crystal grain size, a second region of said layer of semiconductor overlying said layer of second material and including crystal grains having a second average crystal grain size, said first average crystal grain size being substantially larger than said second average crystal grain size.