CMOS image sensor and method of fabricating the same

A method of fabricating a CMOS image sensor comprising:

• forming a device isolation pattern to define a diode region and an active region in a substrate;
• forming a photodiode in the diode region;
• serially forming a transfer gate, a reset gate and a selection gate separated from each other by a predetermined distance, wherein the transfer gate is formed on the active region adjacent to the diode region;
• forming a floating diffusion layer in the active region between the transfer gate and the reset gate and lightly doped diffusion layers in active regions at both sides of the selection gate;
• forming sidewall spacers on a sidewall of the reset gate facing the selection gate and sidewalls of the selection gate;
• simultaneously forming a blocking layer covering a top of the diode region and extended to the active region to cover the transfer gate and the floating diffusion layer;
• and
• implanting impurities into the active regions to form heavily doped diffusion layers that are aligned to outer surfaces of the sidewall spacers in the lightly doped diffusion layers.