Photoelectric conversion device, its manufacturing method, and image pickup device

A manufacturing method of a photoelectric conversion device including a silicon substrate, a photoelectric conversion element arranged on one principal plane of said silicon substrate, and a transfer MOS transistor transferring a signal from said photoelectric conversion element, wherein

• said principal plane has an off-angle forming each angle θ with a (001) plane direction and a (00{overscore (1)}) plane direction to a reference (100) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting said photoelectric conversion element is a direction forming an angle φ to a direction perpendicular to said principal plane within a range of 0°<φ≦45° so that at least a part of said semiconductor region may exist under a gate electrode of said MOS transistor, and further a direction of a projection of the ion injecting direction to said principal plane forms each angle α with the two plane direction within a range of 0°<α<90°.

A photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of said silicon substrate, wherein

• said principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (100) plane within a range of 3.5°≦θ≦4.5°, and a semiconductor region constituting said photoelectric conversion element is arranged under a part of a gate electrode of said transfer MOS transistor, and further a direction of said region arranged under said gate electrode to said photoelectric conversion element as a reference forms an angle α to the off-angle direction within a range of 0°<α<90°.