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US 2006/0141654 A1Published application
Method for fabricating a CMOS image sensor
OwnerBi Liminventor
Life of this patent
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Abstract
A method for fabricating a CMOS image sensor in which an electron shower is performed for microlenses whose surfaces are charged to a positive potential, so as to neutralize the positive potential, thereby improving performance and yield of the image sensor.
Claims18
A method for fabricating a CMOS image sensor comprising:
- forming a metal pad in a pad area over a semiconductor substrate divided into an active area and the pad area;
- forming a passivation layer on an entire surface of the semiconductor substrate including the metal pad;
- selectively removing the passivation layer to expose the metal pad, thereby forming a metal pad open portion;
- forming a barrier layer on the entire surface of the semiconductor substrate including the metal pad open portion;
- forming R, G and B color filter layers over the barrier layer of the active area;
- forming microlenses over the color filter layers;
- removing the barrier layer of the pad area;
- and
- performing electron shower to neutralize positive potential trapped in the microlenses.
6 more elements
A method of neutralizing a positive potential stored in a microlens of an image sensor device comprising:
- performing an electron shower on the microlens.
Dependencies are inferred from the claim text.