Methods of manufacturing an image device
AssigneeSamsung Electronics Co., Ltd.
InventorJa-Young Choi
Life of this patent
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Abstract
In methods of manufacturing an image device, a first structure including a transparent lower portion and an opaque upper portion is formed on a substrate having a photodiode. An etch stop layer pattern positioned over the photodiode is formed on the first structure. A second structure having at least one opaque capping layer is formed on the first structure to cover the etch stop layer pattern. An opening partially exposing the lower portion of the first structure is formed over the photodiode by etching the second structure, the etch stop layer pattern and the opaque upper portion of the first structure.
Claims36
A method of manufacturing an image device, comprising:
- forming a first structure on a substrate having a photodiode, the first structure including an opaque upper portion and a transparent lower portion;
- forming an etch stop layer pattern on the first structure, the etch stop layer pattern being positioned over the photodiode;
- forming a second structure on the first structure to cover the etch stop layer pattern, the second structure having at least one opaque capping layer;
- and
- forming an opening over the photodiode by etching the second structure, the etch stop layer pattern and the opaque upper portion of the first structure, the opening exposing the transparent lower portion of the first structure.
A method of manufacturing an image device, the method comprising:
- forming a photodiode in a first region of a substrate including the first region and a second region;
- forming a first structure on the substrate, the first structure including an opaque upper portion and a transparent lower portion, the first structure including a wire and a capacitor lower electrode that are formed through the first structure, the wire being formed over the first region, the wire not being positioned over the photodiode, the capacitor lower electrode being formed over the second region;
- forming a dielectric layer on the first structure, the wire and the capacitor lower electrode;
- forming an etch stop layer pattern and a capacitor upper electrode on the dielectric layer, the etch stop layer pattern being positioned over the photodiode, the capacitor upper electrode being positioned over the capacitor lower electrode;
- forming a second structure including at least one opaque capping layer on the etch stop layer pattern and the first structure;
- and
- forming an opening over the photodiode by etching the second structure, the etch stop layer pattern and the opaque upper portion of the first structure, the opening exposing the transparent lower portion of the first structure.
Dependencies are inferred from the claim text.