Back to results
US 2006/0141648 A1Published application
Light emitting device methods
AssigneeLuminus Devices, Inc., a Delaware corporation
InventorsAlexei Erchak, John Graff, Michael Brown, Scott Duncan, Milan Minsky
Life of this patent
Estimating the term…
Abstract
Light-emitting device methods are disclosed.
Claims92
1-82. (canceled)
A method of making a light emitting device, the method comprising:
- providing a first multi-layer stack, comprising:
- a substrate;
- a submount, and
- a semiconductor layer between the substrate and the submount, the semiconductor layer being supported by the submount wherein the semiconductor layer and submount are selected so that a coefficient of thermal expansion of the submount differs from a coefficient of thermal expansion of the semiconductor layer by less than about 15%;
- and
- exposing the semiconductor layer to electromagnetic radiation to partially decompose the semiconductor layer;
- and
- removing the substrate from the first multi-layer stack to form a second multi-layer stack.
5 more elements
A method of making a light emitting device, the method comprising:
- providing a first multi-layer stack, comprising:
- a substrate;
- a submount that is thicker than the substrate;
- and
- a semiconductor layer between the substrate and the submount, the semiconductor layer being supported by the submount, wherein the semiconductor layer and submount are selected so that a coefficient of thermal expansion of the submount differs from a coefficient of thermal expansion of the semiconductor layer by less than about 15%;
- and
- exposing the semiconductor layer to electromagnetic radiation to partially decompose the semiconductor layer;
- and
- removing the substrate from the first multi-layer stack to form a second multi-layer stack.
6 more elements
A method of making a light emitting device, the method comprising:
- providing a first multi-layer stack in the form of a wafer, comprising:
- a substrate;
- a submount;
- and
- a semiconductor layer between the substrate and the submount, the semiconductor layer supported by the substrate, wherein the substrate and the submount are selected so that a coefficient of thermal expansion of the submount differs from a coefficient of thermal expansion of the substrate by less than about 15%;
- and
- exposing the semiconductor layer to electromagnetic radiation to partially decompose the semiconductor layer;
- and
- removing the substrate from the first multi-layer stack to form a second multi-layer stack.
6 more elements
Dependencies are inferred from the claim text.