Back to results
US 2006/0141647 A1Published application
Method for fabricating CMOS image sensor
AssigneeDongbu Electronics Co., Ltd.
InventorIn Kim
Life of this patent
Estimating the term…
Abstract
A method for fabricating a CMOS image sensor forms silicon nitride (SiN) layer on a pad. Microlenses, having a minimum height and footprint according to a desired packing density of the lenses, are fabricated of an oxide film and a nitride film deposited on the silicon nitride. Since the lenses have a low height, a refractive index of the lenses may be improved. A sidewall spacer type inner lens may be additionally formed below a main lens curvature to aid in overcoming problems caused by a single-lens structure.
Claims9
A method for fabricating a CMOS image sensor, comprising:
- forming a metal line pattern;
- forming a pad film on the metal line pattern;
- forming a passivation film on the pad film;
- forming a recess by etching the passivation film using a photoresist mask for forming a microlens having a desired shape;
- sequentially depositing a high-density plasma oxide film and an O3 tetra-ethyl-ortho-silicate film on the etched passivation film;
- and
- etching back the high density plasma oxide film and the O3 tetra-ethyl-ortho-silicate film to form a main lens curvature on a surface of the etched passivation film and a sidewall spacer type lens at inner sidewalls of the recess of the etched passivation film, thereby forming a dual-lens structure.
4 more elements
Dependencies are inferred from the claim text.