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AssigneeGrandis, Inc.
InventorsYiming Huai, Mahendra Pakala
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A method and system for providing a magnetic element are disclosed. The method and system include providing first and second pinned layers, a free layer, and first and second barrier layers between the first and second pinned layers, respectively, and the free layer. The first barrier layer is preferably crystalline MgO, which is insulating, and configured to allow tunneling through the first barrier layer. Furthermore, the first barrier layer has an interface with another layer, such as the free layer or the first pinned layer. The interface has a structure that provides a high spin polarization of at least fifty percent and preferably over eighty percent. The second barrier layer is insulating and configured to allow tunneling through the second barrier layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
A magnetic element comprising:
The magnetic element of claim I where the free layer is a low moment free layer.
The magnetic element of claim I wherein the free layer is a tri-layer including a first layer, a second layer, and a third layer, the second layer sandwiched between the first layer and the third layer, the first layer being adjacent to the first barrier layer and having a first spin high polarization, the third layer being adjacent to the second barrier layer and having a second high spin polarization, the second layer either having low moment or a low perpendicular anisotropy.
The magnetic element of claim I wherein the interface is between the free layer and the first barrier layer.
A magnetic element comprising:
The magnetic element comprising:
A method for providing a magnetic element comprising:
Dependencies are inferred from the claim text.