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US 2006/0141397 A1Published application
Resist exposure system and method of forming a pattern on a resist
AssigneeMicron Technology, Inc.
InventorYoshiki Hishiro
Life of this patent
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Abstract
A resist exposure system and a method of forming a pattern on a resist are provided and include an exposure source, a photoresist composition, and a mask positioned therebetween. The resist composition comprises a first photoresist X and a second photoresist Y. The first photoresist X absorbs at a higher wavelength than the second photoresist Y. The second photoresist Y has a lower glass transitional temperature than the first photoresist X.
Claims18
A method of forming a pattern on a photoresist:
- providing a photoresist composition comprising a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature,
- said second photoresist Y is characterized by a second glass transition temperature,
- said second glass transition temperature is lower than said first glass transition temperature,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a first wavelength,
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a second wavelength, and
- said second wavelength is substantially shorter than said first wavelength;
- and
- exposing said photoresist composition to a patterned light source configured to emit radiation at said first wavelength to form an exposed photoresist composition.
6 more elements
A method of forming a pattern on a photoresist:
- providing a photoresist composition comprising a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature,
- said second photoresist Y is characterized by a second glass transition temperature,
- said second glass transition temperature is lower than said first glass transition temperature,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption of about 248 nm, and
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption of about 193 nm;
- and
- exposing said photoresist composition to a patterned light source configured to emit radiation at about 248 nm to form an exposed photoresist composition.
5 more elements
A method of forming a pattern on a photoresist:
- providing a photoresist composition comprising a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature,
- said second photoresist Y is characterized by a second glass transition temperature,
- said second glass transition temperature is lower than said first glass transition temperature,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption of about 193 nm, and
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption of about 157 nm;
- and
- exposing said photoresist composition to a patterned light source configured to emit radiation at about 193 nm to form an exposed photoresist composition.
5 more elements
A method of forming a pattern on a photoresist:
- providing a photoresist composition comprising a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature,
- said second photoresist Y is characterized by a second glass transition temperature,
- said second glass transition temperature is lower than said first glass transition temperature by an amount sufficient to enhance a characteristic mobility of said photoresist composition relative to a photoresist composition including only said first photoresist X,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a first wavelength,
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a second wavelength, and
- said second wavelength is substantially shorter than said first wavelength;
- and
- exposing said photoresist composition to a patterned light source configured to emit radiation at said first wavelength to form an exposed photoresist composition.
6 more elements
A method of forming a pattern on a photoresist:
- providing a photoresist composition comprising a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature,
- said second photoresist Y is characterized by a second glass transition temperature,
- said second glass transition temperature is lower than said first glass transition temperature,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a first wavelength,
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a second wavelength, and
- said second wavelength is substantially shorter than said first wavelength, and
- said second photoresist Y is provided in said photoresist composition in an amount sufficient to enhance a characteristic mobility of said photoresist composition relative to a photoresist composition including only said first photoresist X;
- and
- exposing said photoresist composition to a patterned light source configured to emit radiation at said first wavelength to form an exposed photoresist composition.
7 more elements
A method of forming a patterned semiconductor wafer comprising:
- providing a semiconductor wafer;
- depositing a layer of photoresist composition on said semiconductor wafer, wherein said layer of photoresist composition comprises a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature,
- said second photoresist Y is characterized by a second glass transition temperature,
- said second glass transition temperature is lower than said first glass transition temperature,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a first wavelength,
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a second wavelength, and
- said second wavelength is substantially shorter than said first wavelength;
- exposing said layer of photoresist composition to a patterned light source configured to emit radiation at said first wavelength to form an exposed layer of photoresist composition;
- and
- converting said exposed layer of photoresist composition and said semiconductor wafer to a patterned semiconductor wafer.
8 more elements
A method of forming a patterned semiconductor wafer comprising:
- providing a semiconductor wafer;
- depositing a layer of photoresist composition on said semiconductor wafer, wherein said layer of photoresist composition comprises a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature,
- said second photoresist Y is characterized by a second glass transition temperature,
- said second glass transition temperature is lower than said first glass transition temperature,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption of about 248 nm, and
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption of about 193 nm;
- exposing said layer of photoresist composition to a patterned light source configured to emit radiation at about 248 nm to form an exposed layer of photoresist composition;
- and
- converting said exposed layer of photoresist composition and said semiconductor wafer to a patterned semiconductor wafer.
7 more elements
A method of forming a patterned semiconductor wafer comprising:
- providing a semiconductor wafer;
- depositing a layer of photoresist composition on said semiconductor wafer, wherein said layer of photoresist composition comprises a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature,
- said second photoresist Y is characterized by a second glass transition temperature,
- said second glass transition temperature is lower than said first glass transition temperature,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption of about 193 nm, and
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption of about 157 nm;
- exposing said layer of photoresist composition to a patterned light source configured to emit radiation at about 193 nm to form an exposed layer of photoresist composition;
- and
- converting said exposed layer of photoresist composition and said semiconductor wafer to a patterned semiconductor wafer.
7 more elements
A method of forming a patterned semiconductor wafer comprising:
- providing a semiconductor wafer;
- depositing a layer of photoresist composition on said semiconductor wafer, wherein said layer of photoresist composition comprises a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature,
- said second photoresist Y is characterized by a second glass transition temperature,
- said second glass transition temperature is lower than said first glass transition temperature by an amount sufficient to enhance a characteristic mobility of said photoresist composition relative to a photoresist composition including only said first photoresist X,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a first wavelength,
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a second wavelength, and
- said second wavelength is substantially shorter than said first wavelength;
- exposing said layer of photoresist composition to a patterned light source configured to emit radiation at said first wavelength to form an exposed layer of photoresist composition;
- and
- converting said exposed layer of photoresist composition and said semiconductor wafer to a patterned semiconductor wafer.
8 more elements
A method of forming a patterned semiconductor wafer comprising:
- providing a semiconductor wafer;
- depositing a layer of photoresist composition on said semiconductor wafer, wherein said layer of photoresist composition comprises a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature,
- said second photoresist Y is characterized by a second glass transition temperature,
- said second glass transition temperature is lower than said first glass transition temperature,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a first wavelength,
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a second wavelength,
- said second wavelength is substantially shorter than said first wavelength, and
- said second photoresist Y is provided in said photoresist composition in an amount sufficient to enhance a characteristic mobility of said photoresist composition relative to a photoresist composition including only said first photoresist X;
- exposing said layer of photoresist composition to a patterned light source configured to emit radiation at said first wavelength to form an exposed layer of photoresist composition;
- and
- converting said exposed layer of photoresist composition and said semiconductor wafer to a patterned semiconductor wafer.
9 more elements
A method of forming a patterned semiconductor wafer comprising:
- providing a semiconductor wafer;
- depositing a layer of photoresist composition on said semiconductor wafer, wherein said layer of photoresist composition comprises a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature of about 150° C.,
- said second photoresist Y is characterized by a second glass transition temperature of about 100° C.,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption of about 248 nm, and
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption of about 193 nm;
- baking said semiconductor wafer and said layer of photoresist composition at a temperature between about 100° C. and about 160° C.;
- exposing said layer of photoresist composition to a patterned light source configured to emit radiation at about 248 nm to form an exposed layer of photoresist composition;
- baking said semiconductor wafer and said exposed layer of photoresist composition at a temperature between about 100° C. and about 160° C.;
- developing said exposed layer of photoresist composition;
- etching said semiconductor wafer;
- baking said semiconductor wafer and said exposed layer of photoresist composition at a temperature between about 150° C. and 250° C.;
- removing said exposed layer of photoresist composition;
- and
- inspecting said layer of photoresist composition following said developing said exposed layer of photoresist composition.
12 more elements
A method of forming a patterned semiconductor wafer comprising:
- providing a semiconductor wafer;
- depositing a layer of photoresist composition on said semiconductor wafer, wherein said layer of photoresist composition comprises a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature of about 150° C.,
- said second photoresist Y is characterized by a second glass transition temperature of about 100° C.,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption of about 193 nm,
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption of about 157 nm;
- exposing said layer of photoresist composition to a patterned light source configured to emit radiation at about 193 nm to form an exposed layer of photoresist composition;
- baking said semiconductor wafer and said exposed layer of photoresist composition at a temperature between about 100° C. and about 160° C.;
- developing said exposed layer of photoresist composition;
- etching said semiconductor wafer;
- removing said exposed layer of photoresist composition;
- and
- inspecting said layer of photoresist composition following said developing said exposed layer of photoresist composition.
10 more elements
A method of forming a patterned semiconductor wafer comprising:
- providing a semiconductor wafer;
- forming layer of photoresist composition on said semiconductor wafer, wherein said layer of photoresist composition is formed by depositing a layer of a first photoresist X on said semiconductor wafer and depositing a layer of a second photoresist Y on said semiconductor wafer, wherein
- said first photoresist X is characterized by a first glass transition temperature,
- said second photoresist Y is characterized by a second glass transition temperature,
- said second glass transition temperature is lower than said first glass transition temperature,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a first wavelength,
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a second wavelength, and
- said second wavelength is substantially shorter than said first wavelength;
- exposing said layer of photoresist composition to a patterned light source configured to emit radiation at said first wavelength to form an exposed layer of photoresist composition;
- and
- converting said exposed layer of photoresist composition and said semiconductor wafer to a patterned semiconductor wafer.
8 more elements
A patterned semiconductor wafer formed by a process comprising:
- providing a semiconductor wafer;
- depositing a layer of photoresist composition on said semiconductor wafer, wherein said layer of photoresist composition comprises a combination of a first photoresist X and a second photoresist Y, wherein
- said first photoresist X is characterized by a first glass transition temperature,
- said second photoresist Y is characterized by a second glass transition temperature,
- said second glass transition temperature is lower than said first glass transition temperature,
- said first photoresist X is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a first wavelength,
- said second photoresist Y is characterized by an absorption spectrum exhibiting an operational absorption in the vicinity of a second wavelength, and
- said second wavelength is substantially shorter than said first wavelength;
- exposing said layer of photoresist composition to a patterned light source configured to emit radiation at said first wavelength to form an exposed layer of photoresist composition;
- and
- converting said exposed layer of photoresist composition and said semiconductor wafer to a patterned semiconductor wafer.
8 more elements
Dependencies are inferred from the claim text.