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US 2006/0141396 A1Published application
Electron beam lithography method using new material
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-bong Park, Chel-jong Choi
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Abstract
An electron beam (EB) lithography method using a new material is provided. The method includes forming a thin layer using a Pb-based material; and patterning the thin layer by partially volatilizing the thin layer by irradiating electron beams. In this method, the thin layer formed of the Pb-based material is patterned using e-beams so that the linewidth of patterns formed on the thin layer can be greatly reduced.
Claims20
An electron beam lithography method comprising:
- forming a thin layer using a Pb-based material;
- and
- patterning the thin layer by partially volatilizing the thin layer by irradiating electron beams.
An electron beam lithography method comprising:
- preparing a substrate;
- forming a thin layer by depositing a Pb-based material on the substrate;
- obtaining the thin layer by removing the substrate;
- and
- patterning the thin layer by partially volatilizing the thin layer by irradiating electron beams.
2 more elements
An electron beam lithography method comprising:
- preparing a substrate;
- forming a Pb-based material layer by depositing a Pb-based material on the substrate to a predetermined thickness;
- forming a thin layer by severing the Pb-based material layer and the substrate in a direction normal to a surface of the substrate;
- and
- patterning the thin layer by partially volatilizing the thin layer by irradiating electron beams.
2 more elements
Dependencies are inferred from the claim text.