US 2006/0141269 A1 · Siloxane-based resin containing germanium and an interlayer insulating film for a semiconductor device using the same

Abstract

A siloxane-based resin having germanium and an interlayer insulating-film for a semiconductor device formed using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties so that they are useful materials for an insulating film between interconnecting layers of a semiconductor device.

Claims9

Dependent claims

1-3. (canceled)

Dependencies are inferred from the claim text.

Facts

Application

11/342,562Filed 31 Jan 2006

Priority

KR 2003-4773114 Jul 2003

Published

29 Jun 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

H10W 20/48
Characterised by their insulating parts: insulating materials thereof
C08G 77/50
In which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms: by carbon linkages
C08G 77/58
In which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms: metal-containing linkages
C08L 83/14
Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with…

Abstract

Claims9

Dependent claims

1-3. (canceled)

Dependencies are inferred from the claim text.

Siloxane-based resin containing germanium and an interlayer insulating film for a semiconductor device using the same

Life of this patent

Abstract

Claims9

Siloxane-based resin containing germanium and an interlayer insulating film for a semiconductor device using the same

Life of this patent

Abstract

Claims9