Information recording medium and manufacturing method thereof
OwnerTaeko Suenagainventor
Life of this patent
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Abstract
An information recording medium, comprising: a recording layer which can phase-change reversibly between a crystal phase and an amorphous phase by using an optical means or an electric means, wherein the recording layer comprises at least Ge, Te, M1 (which is at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Yb and Lu), M2 (which is at least one element selected from the group consisting of Sb and Bi) and M3 (which is at least one element selected from the group consisting of Te and Bi).
Claims31
An information recording medium, comprising:
- a recording layer which can phase-change reversibly between a crystal phase and an amorphous phase by using an optical means or an electric means,
- wherein the recording layer comprises at least Ge, Te, M1 (which is at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Yb and Lu), M2 (which is at least one element selected from the group consisting of Sb and Bi) and M3 (which is at least one element selected from the group consisting of Te and Bi).
A method for manufacturing an information recording medium, comprising:
- at least a step for forming a recording layer which can phase-change,
- wherein the step for forming the recording layer uses a sputtering target that comprises at least Ge, Te, M1 (which is at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Yb and Lu), M2 (which is at least one element selected from the group consisting of Sb and Bi) and M3 (which is at least one element selected from the group consisting of Te and Bi).
Dependencies are inferred from the claim text.