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US 2006/0140839 A1Published application
Process for producing boron nitride
AssigneeGeneral Electric Company
InventorsLaurence Maniccia, Donald Pultz
Life of this patent
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Abstract
A process for producing boron nitride using a boron containing ore as a starting material, by reacting naturally occurring ulexite with ammonia at high temperature, for a boron nitride with high impurity and at a high yield.
Claims23
A process for producing a polycrystalline hexagonal boron nitride compound, which comprises:
- heating a mixture containing a boron-containing compound comprising ulexite with a nitrogen-containing compound selected from the group consisting of organic primary, secondary, and tertiary amines, and mixtures thereof, for at least 10 minutes at a temperature of at least 700° C., under a non-oxidizing atmosphere to form boron nitride.
A process for producing a polycrystalline hexagonal boron nitride compound, which comprises:
- a) forming a mixture of a boron-containing compound comprising ulexite with a nitrogen-containing compound selected from the group consisting of organic primary, secondary, and tertiary amines, and mixtures thereof;
- b) heating the mixture at a temperature of at least 200° C. for at least ½ hour to dry off any moisture in the mixture;
- c) subjecting the mixture to a processing temperature of at least 1000° C. for up to 24 hours to form a hexagonal boron nitride compound.
A process for producing a polycrystalline hexagonal boron nitride compound, which comprises:
- a) forming a mixture of a boron-containing compound comprising ulexite with a nitrogen-containing compound selected from the group consisting of organic primary, secondary, and tertiary amines, and mixtures thereof, in a ratio of 35 to 55 wt. % of the nitrogen-containing compound to the boron-containing compound;
- b) heating the mixture at a temperature of at least 200° C. for at least ½ hour to dry off any moisture in the mixture;
- c) subjecting the mixture to a processing temperature of at least 1100 to for up to 5 hours to form an incompletely reacted boron nitride compound;
- and
- d) subjecting the incompletely reacted boron nitride compound to a processing temperature of at least 1200 to 2300° C. for up to 24 hours to form a hexagonal boron nitride compound.
2 more elements
Dependencies are inferred from the claim text.